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| PGE 608 21 EDFA Gain Block for DWDM Applications Key Features * Full C-band EDFA (1530-1563 nm) * +20 dBm output power using 3 pumps * Single pumped preamp available * Mid-stage access available * Dual-sourced footprint and pinning * Low noise figure, typical 5 dB * Optical monitor output * Small size (125x150x13 mm) Applications * Used as a C-band pre-, line- or booster amplifier EDFA in DWDM networks. Description The PGE 608 21 C-band EDFA family are 40-channel optical amplifiers intended to be used as pre-, line- or booster amplifiers in DWDM networks. It is designed for 1 to 3 pump laser configurations and is based on a dualsourced platform.The gain block has input and output power monitoring. The input and output ports have isolators to attenuate spurious reflections in the system. External electronic circutry is needed for biasing the pump laser and for controlling the pump laser temperature. Heat sink is provided via the bottom surface. 1 PGE 608 21 Optical input signal Input power monitor Optical gain Output power monitor Optical output signal 40 pin electrical interface Optical output power monitor Figure 1. Block diagram Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Description Common 1, 1480 nm pump 2: Laser anode, pump monitor cathode & thermistor Laser cathode 1480 nm pump 2 Pump monitor anode, 1480 nm pump 2 Thermistor, 1480 nm pump 2 TEC pos, 1480 nm pump 2 TEC neg, 1480 nm pump 2 Thermistor, PCB Thermistor, PCB Common 2, 980 nm pump: Laser anode, pump monitor cathode & thermistor Laser cathode, 980 nm pump Pump monitor anode, 980 nm pump Thermistor, 980 nm pump TEC pos, 980 nm pump TEC neg, 980 nm pump SCL EEPROM SDA EEPROM GND GND NC (Spare monitor 1 cathode) NC (Spare monitor 1 anode) Input monitor cathode Input monitor anode NC NC NC NC NC (Spare monitor 2 cathode) NC (Spare monitor 2 anode) Output monitor cathode Output monitor anode GND GND EEPROM +5 V EEPROM 0 V Common 3, 1480 nm pump 1: Laser anode, pump monitor cathode & thermistor Laser cathode 1480 nm pump 1 Pump monitor anode, 1480 nm pump 1 Thermistor, 1480 nm pump 1 TEC pos, 1480 nm pump 1 TEC neg, 1480 nm pump 1 Figure 2. Mechanical Outline Drawing and Pin Connection 2 PGE 608 21 Optical Characteristics Electrical and optical characteristics at recommended operating conditions, unless otherwise noted. 04 = single pump, 05 = double pump, 06 = triple pump Parameter Conditions Symbol 04 05 06 Operating Wavelength L -----1530-1562---- Measurement Wavelength M -------1550------- Input Power PIL -9.5 -6 -6 Output Power, min @ PIL and M POut 14 17 20 Noise Figure, max @ PIL and L NF 6.0 6.0 6.0 Gain @ PIL and L GOPT 17 23 26 Gain Flatness, max @ PIL and L (Note 1) GFlat 0.8 0.8 0.8 Note 1. GFLAT=(GMAX-GMIN)/2, where GMAX is the maximum gain for L and GMIN is the minimum gain for L. The gain is measured as dynamic gain under constant saturation. Unit nm nm dBm dBm dB dB dB Electrical Characteristics Parameter Conditions Symbol Operating Current, max Operating Voltage, max Power Dissipation, max Thermistor Resistance TEC Current, max TEC Voltage, max @ T=50 K @ T=50 K IDrive VF PE RTh ITEC VTEC 04 300 05 300+720 06 Unit 300+720x2 mA 2.4 3.5 9.5 1.1 2.6 2.5 10.6 10 1.1+1.5 2.6+3.8 2.5 17.7 10.5 1.1+1.5x2 2.6+3.8x2 V W k A V Operating Conditions Parameter Symbol Min Typ Max Unit Operating Case Temperature TCase -5 70 C Absolute Maximum Ratings Parameter Symbol Min Max Unit Storage Temperature Drive Current Tstg ILD_MAX -40 300/800 75 C mA CAUTION: Stresses outside those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. 3 PGE 608 21 Handling Precautions This device may be damaged as a result of electrostatic discharge (ESD). Take proper precautions during both handling and testing. This typically includes grounded wrist wraps, workbenches and floor mats in ESD controlled areas. Semiconductor devices may be damaged by current surges, use appropriate transient protection. Quality Assurance Ericsson Microelectronics commitment to quality has been proven through a decade of semiconductor device production and has been confirmed to ISO 9001. Opto product qualification is made according to the intention of applicable Telcordia standards. Connector Options SC/SPC (Other connectors available on request) DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM WAVELENGTH 1300 nm - 1600 nm CLASS 3B LASER Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Ericsson Microelectronics. These products are sold only according to Ericsson Microelectronics' general conditions of sale, unless otherwise confirmed in writing. Product specifications subject to change without notice. Ericsson Microelectronics AB SE-164 81 Kista, Sweden Telephone: +46 8 757 50 00 www.ericsson.com/microelectronics For local sales contacts, please refer to our website or call: Int + 46 8 757 47 00, Fax: +46 8 757 47 76 1522-PGE 608 21 Rev. D (c) Ericsson Microelectronics AB, October 2000 4 |
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